A4G16QE8BNWESW
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Datasheet / Notice
Ajouté à projet
Echantillon
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- Capacity
- 16GB
- Temp.max.
- 85°C
- Layout
- SO-DIMM
- Temp.min.
- -40°C
- Clockfrequency
- 3200 MHZ
- ECC
- NO
- Voltage
- 1.2
- Pins
- 260
- Registered
- NO
- Automotive
- NO
- RoHS Status
- RoHS-conform
- Packaging
- TRAY
- Numéro du tarif douanier
- 84733020000
- Pays
- Taiwan
- Délai de livraison standard
- 4 Semaines
ATP's fourth-generation industrial DDR memory combines up to 3200 MT/s data transfer rate and a mere 1.2V power consumption to deliver faster performance at higher power savings over earlier DRAM technologies.
As the evolutionary transition from DDR3, DDR4 supports features and functions that are well-suited for increasing bandwidth capabilities to support the growth of online traffic.
DDR4-3200 MT/s is the newest generation of fast, performance-oriented DRAM modules optimized for the latest Intel® Xeon® Platinum, Gold, Silver and Bronze Scalable processors and 8th-generation Intel® Core™ i7/i5/i3 processors. The increased interface speed from 2400 MT/s to 3200 MT/s amplifies theoretical peak performance by 20% and gives a boost to the most critical computing applications in industries such as telecommunication infrastructures, networking storage systems, network-attached storage (NAS) servers, micro/cloud servers, and embedded systems like industrial PCs.
Features:
-Density: 2 GB to 256 GB
-Increased performance and bandwidth (up to 3200 MT/s)
-Decreased voltage for better power consumption
-Provides better reliability, availability and serviceability (RAS) and improves data integrity
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