FZ825R33HE4DBPSA1
nouveau produit
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Description:
1xIGBT-MOD 3300V 825A IHVB130
Fabricant:
INFINEON
Désignation Produit:
FZ825R33HE4D
Rutronik No.:
IGBT2994
Unité d'emballage:
2
MOQ:
2
Boitier:
IHVB130
Packaging:
TRAY
Datasheet / Notice
Ajouté à projet
Echantillon
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- V(CE)
- 3300 V
- I(C)
- 825 A
- td(on)
- 1650 ns
- P(tot)
- 150 W
- t(r)
- NO ns
- V(CEsat)
- NO V
- Mounting
- IGBT4-E4
- Automotive
- NO
- Package
- IHVB130
- RoHS Status
- RoHS-conform
- Packaging
- TRAY
- Référence fabricant
- SP005550793
- ECCN
- EAR99
- Numéro du tarif douanier
- 85412900000
- Pays
- Germany
- Annuaire ABC
- A
- Délai de livraison standard
- 54 Semaines
3300 V, 825 A single switch IGBT module
Applications
IHV-B 3300 V, 3300 V, 825 A 130 mm single switch IGBT Module with TRENCHSTOP™ IGBT4 and Emitter Controlled 4 diode. The experienced solution for traction and industry applications.
Summary of Features
- High DC stability
- Best in class short circuit capability
- Low switching losses
- Tvj op = 150°C
- VCEsat with positive temperature coefficient
- AlSiC base plate for increased thermal cycling capability
- Package with CTI > 600
- Isolated base plate
- Diode Power 30% higher than IGBT
Benefits
- Unbeatable robustness
- Standardized housing
- 2 times higher Power Cycling Capability than Infineon IGBT3 and any competition 3.3 kV IHV
- Easy replacement of FZ1000R33HE3 and FZ800R33KF2C and as well any competition 800 to 1000 A 3.3 kV devices possible on high performance and housing compatibility
- Bigger Diode enables e.g. increased braking Power at traction applications
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