IDW40G120C5BFKSA1
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Description:
SiC-D 1200 40A 1,4V TO247-3
Fabricant:
INFINEON
Désignation Produit:
IDW40G120C5B
Rutronik No.:
DSKYP5478
Unité d'emballage:
30
MOQ:
240
Boitier:
TO247-3
Packaging:
TUBE
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Datasheet / Notice
Ajouté à projet
Echantillon
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- V(RRM)
- 1200 V
- I(F)per diode
- 20 A
- I(FSM)
- 290 A
- V(F)
- 1.65 V
- Technology
- 5thinQ!SiC
- Automotive
- NO
- Package
- TO247-3
- RoHS Status
- RoHS-conform
- Packaging
- TUBE
- Configuration
- CommonCath
- Mounting
- THT
- Référence fabricant
- SP001020714
- ECCN
- EAR99
- Numéro du tarif douanier
- 85411000000
- Pays
- China
- Annuaire ABC
- A
- Délai de livraison standard
- 14 Semaines
The CoolSiC™ Schottky diode generation 5 1200 V, 40 A in a TO-247-3 package, presents a leading edge technology for SiC Schottky Barrier diodes. The thin wafer technology, already introduced with G2, is now combined with a new merged pn junction improving diode surge current capabilities. The result is a series of products delivering market leading efficiency and more system reliability at an attractive cost point.
Summary of Features
- Best-in-class forward voltage (VF)
- No reverse recovery charge
- Mild positive temperature dependency of VF
- Best-in-class surge current capability
- Excellent thermal performance
Benefits
- Highest system efficiency
- Improved system efficiency at low switching frequencies
- Increased power density at high switching frequencies
- Higher system reliability
- Reduced EMI
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