IGP30N65H5XKSA1

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Description: IGBT 650V 30A 1.65V TO220-3 Fabricant: INFINEON Désignation Produit: IGP30N65H5 Rutronik No.: IGBT2339 Unité d'emballage: 50 MOQ: 500 Boitier: TO220-3 Packaging: TUBE

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Datasheet / Notice Ajouté à projet Echantillon

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Paramètres

V(CE): 650 V
I(C): 30 A
V(CEsat): 1.65 V
Package: TO220-3
Bodydiode: NO
P(tot): 188 W
Automotive: NO
t(r): 9 nS
td(off): 177 nS
td(on): 19 nS
Mounting: THT
RoHS Status: RoHS-conform
Technology: HighSpeed
Packaging: TUBE

Référence fabricant: SP001037772
ECCN: EAR99
Numéro du tarif douanier: 85412900000
Pays: Malaysia
Annuaire ABC: B
Délai de livraison standard: 21 Semaines

Description

Infineon’s new TRENCHSTOP™5 IGBT technology redefines “Best-in-class” IGBT by providing unmatched performance in terms of efficiency for hard switching applications. The new family is a major breakthrough in IGBT innovation to match the market’s high efficiency demands of tomorrow.

Summary of Features

650V breakthrough voltage
Compared to Infineon’s Best-in-class HighSpeed 3 family
Factor 2.5 lower Q g
Factor 2 reduction in switching losses
200mV reduction in V CE(sat)
Low C OES/E OSS
Mild positive temperature coefficient V CE(sat)
Temperature stability of V f

Benefits

Best-in-class efficiency, resulting in lower junction and case temperature leading to higher device reliability
50V increase in the bus voltage possible without compromising reliability
Higher power density design

Target Applications

Uninterruptible Power Supplies
Welding

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