IKZA75N65RH5XKSA1
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Datasheet / Notice
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Echantillon
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- V(CE)
- 650 V
- I(C)
- 80 A
- V(CEsat)
- 1.65 V
- Package
- TO247-4
- Bodydiode
- YES
- P(tot)
- 395 W
- Automotive
- NO
- t(r)
- 8 nS
- td(off)
- 180 nS
- td(on)
- 25 nS
- Mounting
- THT
- RoHS Status
- RoHS-conform
- Technology
- IGBT5
- Packaging
- TUBE
- Référence fabricant
- SP004038216
- ECCN
- EAR99
- Numéro du tarif douanier
- 85412900000
- Pays
- China
- Annuaire ABC
- C
- Délai de livraison standard
- 22 Semaines
650 V, 75 A IGBT Discrete with CoolSiC™ diode
650 V, 75 A TRENCHSTOP™ 5 H5 IGBT co-packed with half-rated 6th generation CoolSiC™ Schottky barrier diode in Kelvin-emitter TO-247-4 package.
The ultra-fast 650 V hard-switching TRENCHSTOP™ 5 H5 IGBT benefits very low switching losses at switching speed above 30 kHz.
Combination of ultra-fast TRENCHSTOP™ 5 H5 IGBT with half-rated freewheeling SiC Schottky barrier diodes enables unprecedented reduction of total switching losses and allows to increase significantly switching frequency.
The Kelvin emitter TO-247 4pin package provides ultra-low inductance to the gate-emitter control loop further improving switching performance especially at high switching frequencies.
Summary of Features
- Ultra-low switching losses due to the combination of TRENCHSTOP™ 5 and CoolSiC™ diode technology as well as the Kelvin emitter package
- Very low on-state losses
- Benchmark switching efficiency in hard switching topologies
- Simplified PCB design due to the optimized pin-out of the four-pin package
- Qualified according to JEDEC for target applications
- Pb-free lead plating; RoHS compliant
- Qualified for industrial applications according to the relevant tests of JEDEC 47/20/22
Benefits
- Highest efficiency
- Increased power density
- Plug & play replacement of the pure silicon devices
- Easy upgrade of existing designs for higher efficiency
- Reduced cooling effort
- Excellent for paralleling
- Power Management (SMPS) - Reference Design
- Solutions for solar energy systems
- Uninterruptible Power Supply (UPS)
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