1EDN7550UXTSA1
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Datasheet / Notice
Ajouté à projet
Echantillon
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- Channels
- 1
- I(lim,min)/Ch
- 4 A
- Mounting
- SMD
- T(j,min)
- -40 °C
- T(j,max)
- 150 °C
- Inductance
- 8 A
- t(on)
- 0.045 µS
- t(off)
- 0.045 µS
- Technology
- EiceDRIVER
- OL Detection
- NO
- Automotive
- NO
- Package
- TSNP-6
- RoHS Status
- RoHS-conform
- Packaging
- REEL
- Référence fabricant
- SP001690394
- ECCN
- EAR99
- Numéro du tarif douanier
- 85423990000
- Pays
- Malaysia
- Annuaire ABC
- B
- Délai de livraison standard
- 15 Semaines
1-channel non-isolated gate-driver IC family with truly differential inputs
The 1EDN7550U is a non-isolated gate-driver IC and available in an ultrasmall TSNP package. It has truly differential inputs enabling cost-effective solutions with exceptional power density in:
• Boost-PFC with Kelvin-source MOSFETs
• Synchronous rectification stages
• Designs with long distance between control IC and gate-driver IC
• Buck-boost converters
• Low- and medium-voltage half-bridges
• High density 48V to 12V intermediate bus converter
Summary of Features
• Truly differential inputs for configurable common mode robustness
• 4A source current
• 8A sink current
• Separate source/sink outputs
• Low-ohmic output stage
• 29ns input minimum pulse width
• -7 ns/+10 ns propagation delay accuracy
• 5A reverse current robustness of the outputs
• 4V UVLO version
• TSNP-6 package
Benefits
• Robust
• Small
• PCB layout flexibility
• High power density
• Short time to market
Potential Applications
• Boost-PFCs with Kelvin-source MOSFETs
• Interleaved PFC
• Full-bridge synchronous rectification stages
• 48V to 12V intermediate bus converters
• Buck-boost converters
• Low- and medium-voltage half-bridges
Application benefits
• Robust against ground shifts from power MOSFET switching
• Low MOSFET switching losses
• Robust against false MOSFET triggering
• Highest effective MOSFET driving power
• Efficiency gains
• Increased power density and BOM savings
• Instant MOSFET protection under abnormal operation
• High power density
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