BFP740FESDH6327XTSA1
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Description:
NPN HF-Transistor TSFP-4-1
Fabricant:
INFINEON
Désignation Produit:
BFP740FESD H6327
Rutronik No.:
THF5247
Unité d'emballage:
3000
MOQ:
3000
Boitier:
TSFP-4-1
Packaging:
REEL
Datasheet / Notice
Ajouté à projet
Echantillon
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- Polarity
- NPN
- Frequency f
- 55000 MHz
- Package
- TSFP-4-1
- Automotive
- AEC-Q(101)
- RoHS Status
- RoHS-conform
- Packaging
- REEL
- Référence fabricant
- SP000890036
- ECCN
- EAR99
- Numéro du tarif douanier
- 85412100000
- Pays
- China
- Annuaire ABC
- B
- Délai de livraison standard
- 10 Semaines
The BFP740FESD is a Silicon Germanium Carbon (SiGe:C) NPN Heterojunction wideband Bipolar RF Transistor (HBT) with an integrated ESD protection
Summary of Features:
- Unique combination of high end RF performance and robustness: 21 dBm maximum RF input power, 2 kV ESD robustness (HBM) due to integrated protection circuits
- NFmin = 0.6 dB at 2.4 GHz and 0.8 dB at 5.5 GHz, 3V, 6 mA
- High gain Gms = 26 dB at 2.4 GHz and Gma = 20.5 dB at 5.5 GHz, 3V, 25 mA
- OIP3 = 23.5 dBm at 5.5 GHz, 25 mA
- Low profile and small form factor leadless package
- Wireless communications: WLAN, WiMax and UWB
- Satellite communication systems: GNSS Navigation systems (GPS, GLONASS, Beidou, Galileo), Satellite radio (SDARs, DAB) and C-band LNB
- Multimedia applications such as portable TV, CATV, FM Radio
- ISM applications like RKE, AMR and Zigbee, as well as for emerging wireless applications
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