IDD05SG60CXTMA2
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Description:
S-Diode 600V 5A 2.80V TO252-3
Fabricant:
INFINEON
Désignation Produit:
IDD05SG60C
Rutronik No.:
DSKY5340
Unité d'emballage:
2500
MOQ:
2500
Boitier:
DPAK
Packaging:
REEL
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Datasheet / Notice
Ajouté à projet
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Datasheet / Notice
Ajouté à projet
Echantillon
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- V(RRM)
- 600 V
- I(F)per diode
- 5 A
- I(FSM)
- 18 A
- V(F)
- 2.8 V
- Technology
- 3thinQ!SiC
- Automotive
- NO
- Package
- DPAK
- RoHS Status
- RoHS-conform
- Packaging
- REEL
- Configuration
- SINGLE
- Mounting
- SMD
- T(j) max
- 175 °C
- Référence fabricant
- SP001633162
- ECCN
- EAR99
- Numéro du tarif douanier
- 85411000000
- Pays
- Malaysia
- Annuaire ABC
- A
- Délai de livraison standard
- 41 Semaines
The third generation of Infineon SiC Schottky diodes features the industry’s lowest device capacitance for any given current rating, which further enhances overall system efficiency, especially at higher switching frequencies and under low load conditions. The generation 3 is based on the same technology platform as generation 2 with the introduction, at package level, of the so called diffusion soldering.
Summary of Features
- Benchmark switching behavior
- No reverse recovery charge
- Temperature independent switching behavior
- High operating temperature (T j max 175°C)
Benefits
- System efficiency improvement compared to Si diodes
- Reduced cooling requirements
- Enabling higher frequency/increased power density
- Higher system reliability due to lower operating temperature
- Reduced EMI
Target Applications
- Server
- Telecom
- Solar
- Lighting
- PC power
- AC-DC
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