IDK10G65C5XTMA2

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Description: SIC-D 650V 10A (150-wafer)TO263 Fabricant: INFINEON Désignation Produit: IDK10G65C5 Rutronik No.: DSKY5882 Unité d'emballage: 1000 MOQ: 1000 Boitier: D2PAK Packaging: REEL

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Paramètres

V(RRM): 650 V
I(F)per diode: 12 A
I(FSM): 97 A
V(F): 1.5 V
Technology: 5thinQ!SiC
Automotive: NO
Package: D2PAK
RoHS Status: RoHS-conform
Packaging: REEL
Configuration: SINGLE
Mounting: SMT
T(j) max: 175 °C

Référence fabricant: SP001633196
ECCN: EAR99
Numéro du tarif douanier: 85411000000
Pays: Malaysia
Délai de livraison standard: 19 Semaines

Description

CoolSiC™ generation 5 represents Infineon’s leading edge technology for SiC Schottky Barrier diodes. The Infineon proprietary diffusion soldering process, already introduced with G3, is now combined with a new, more compact design and thin wafer technology. The result is a new family of products showing improved efficiency over all load conditions, coming from both the improved thermal characteristics and a lower figure of merit (Q c x V f).

Summary of Features

V br at 650V
Improved figure of merit (Q c x V f)
No reverse recovery charge
Soft switching reverse recovery waveform
Temperature independent switching behavior
High operating temperature (T j max 175°C)
Improved surge capability
Pb-free lead plating

Benefits

Higher safety margin against overvoltage and complements CoolMOS™ offer
Improved efficiency over all load conditions
Increased efficiency compared to Silicon Diode alternatives
Reduced EMI compared to snappier Silicon diode reverse recovery waveform
Highly stable switching performance
Reduced cooling requirements
Reduced risks of thermal runaway
RoHS compliant
Very high quality and high volume manufacturing capability

Target Applications

Telecom/server SMPS
Solar
UPS
PC power
LED/LCD TV
Motor drives
HID lighting

Quantité

Stock Info

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Prix unitaire

1,48 $

Valeur totale

1.480,00 $

Prix

1.000	1,48 $
2.000	1,42 $
3.000	1,38 $
4.000	1,31 $
5.000	1,25 $

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