IHW30N65R6XKSA1
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Datasheet / Notice
Ajouté à projet
Echantillon
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- V(CE)
- 650 V
- I(C)
- 65 A
- V(CEsat)
- 1.26 V
- Package
- TO247-3
- Bodydiode
- YES
- P(tot)
- 163 W
- Automotive
- NO
- t(r)
- 11 nS
- td(off)
- 161 nS
- td(on)
- 13 nS
- Mounting
- THT
- RoHS Status
- RoHS-conform
- Technology
- RC-Soft-Sw
- Packaging
- TUBE
- Référence fabricant
- SP005399486
- ECCN
- EAR99
- Numéro du tarif douanier
- 85412900000
- Pays
- China
- Annuaire ABC
- B
- Délai de livraison standard
- 21 Semaines
650 V, 30 A IGBT with monolithically integrated diode in TO-247 package
Reverse Conducting R6 650 V, 30 A IGBT in TO-247 package with monolithically integrated diode is designed to fulfill demanding requirements of induction heating applications using half-bridge resonant topology.
Thanks to best system performances and high compatibility with existing gate driver solution, 650 V R6 IGBT represents the optimal choice for soft switching topologies.
Summary of Features
- Very low VCEsat and low Eoff
- High ruggedness and stable temperature behavior
- Easy parallel switching capability due to positive temperature coefficient in VCEsat
- Frequency range 20-75 kHz
- Low EMI
- Very tight parameter distribution
- Maximum operating TJ of 175 °C
Benefits
- Lowest losses on IGBT, high system efficiency for higher power output
- Fast and easy replacement of predecessor R5 portfolio
- High device reliability
- Good EMI behaviour
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