IKA15N65F5XKSA1
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Description:
IGBT 650V 15A 1,6V TO220-3
Fabricant:
INFINEON
Désignation Produit:
IKA15N65F5
Rutronik No.:
IGBT1982
Unité d'emballage:
50
MOQ:
500
Boitier:
TO220-3
Packaging:
TUBE
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Datasheet / Notice
Ajouté à projet
Echantillon
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- V(CE)
- 650 V
- I(C)
- 15 A
- V(CEsat)
- 1.6 V
- Package
- TO220-3
- Bodydiode
- YES
- P(tot)
- 33.3 W
- Automotive
- NO
- t(r)
- 7 nS
- td(off)
- 150 nS
- td(on)
- 17 nS
- Mounting
- THT
- RoHS Status
- RoHS-conform
- Technology
- Hspeed F5
- Packaging
- TUBE
- Référence fabricant
- SP000973416
- ECCN
- EAR99
- Numéro du tarif douanier
- 85412900000
- Pays
- China
- Annuaire ABC
- B
- Délai de livraison standard
- 21 Semaines
Infineon’s new TRENCHSTOP™5 IGBT technology redefines “Best-in-class” IGBT by providing unmatched performance in terms of efficiency for hard switching applications. The new family is a major breakthrough in IGBT innovation to match the market’s high efficiency demands of tomorrow.
Summary of Features
- 650V breakthrough voltage
- Compared to Infineon’s best-in-class HighSpeed 3 family
- Factor 2.5 lower Q g
- Factor 2 reduction in switching losses
- 200mV reduction in V CE(sat)
- Co-packed with Infineon’s new Rapid Si-diode technology
- Low C OES/E OSS
- Mild positive temperature coefficient V CE(sat)
- Temperature stability of V f
- Best-in-class efficiency, resulting in lower junction and case temperature leading to higher device reliability
- 50V increase in the bus voltage possible without compromising reliability
- Higher power density design
- Uninterruptible Power Supplies
- Welding
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