IKP39N65ES5XKSA1
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Datasheet / Notice
Ajouté à projet
Echantillon
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- V(CE)
- 650 V
- I(C)
- 62 A
- V(CEsat)
- 1.45 V
- Package
- TO-220
- Bodydiode
- YES
- P(tot)
- 188 W
- Automotive
- NO
- t(r)
- 30 nS
- td(off)
- 120 nS
- td(on)
- 20 nS
- Mounting
- THT
- RoHS Status
- RoHS-conform
- Technology
- TRENCHSTOP
- Packaging
- TUBE
- Référence fabricant
- SP002882512
- ECCN
- EAR99
- Numéro du tarif douanier
- 85412900000
- Pays
- Malaysia
- Délai de livraison standard
- 21 Semaines
650 V IGBT with anti-parallel diode in TO-220 package
The 650 V, 39 A hard-switching TRENCHSTOP™ 5 S5 IGBT in a small footprint TO-220 package addresses applications switching between 10 kHz and 40 kHz to deliver high current density, high efficiency, faster time-to-market cycles, circuit design complexity reduction and PCB bill of material cost optimization.
Summary of Features:
- Very low VCEsat of 1.35 V at 25°C, 20% lower than TRENCHSTOP™ 5 H5
- 4 times Ic pulse current (100°C Tc)
- Soft current fall characteristics with no tail current
- Symmetrical, low voltage overshoot
- Gate voltage under control (no oscillation). No risk of unwanted turn-on of device and no need for gate clamping
- Maximum junction temperature Tvj = 175°C
- Qualified according to JEDEC standards
- Highest power density in TO-220 footprint
- VCEpeak clamping circuits not required
- No need for gate clamping components
- Good EMI behaviour
- Excellent for paralleling
- Industrial heating and welding
- Solutions for solar energy systems
- Uninterruptible power supply
- Fast EV Charging
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