IKQ75N120CS6XKSA1

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Description: IGBT 1200V 75A 1,85V TO247-3 Fabricant: INFINEON Désignation Produit: IKQ75N120CS6 Rutronik No.: IGBT2490 Unité d'emballage: 30 MOQ: 240 Boitier: TO-247 Packaging: TUBE

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Datasheet / Notice Ajouté à projet Echantillon

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Paramètres

V(CE): 1200 V
I(C): 75 A
V(CEsat): 1.85 V
Package: TO-247
Bodydiode: YES
P(tot): 880 W
Automotive: NO
t(r): 44 nS
td(off): 300 nS
td(on): 34 nS
Mounting: THT
RoHS Status: RoHS-conform
Technology: Trench
Packaging: TUBE

Référence fabricant: SP001666624
ECCN: EAR99
Numéro du tarif douanier: 85412900000
Pays: China
Annuaire ABC: A
Délai de livraison standard: 21 Semaines

Description

Description:

Summary of Features

High efficiency in hard switching and resonant topologies
Low saturation voltage if 1.85 V combined with low switching losses
Easy paralleling capability due to positive temperature coefficient in VCEsat
Low EMI
Low Gate Charge QG
Very soft, fast recovery anti-parallel diode
High ruggedness, temperature stable behaviour
Very tight parameter distribution
High power density and low thermal resistance of the TO-247PLUS package

Benefits

Lowest losses on IGBT, high system efficiency for higher power output
Fast and easy replacement of predecessor H3 technology
High device reliability and lifetime expectancy
Highest current of 75 A 1200 V IGBT with 75 A diode in TO-247 footprint
Lower thermal resistance Rth(jh) of the TO-247PLUS benefits to ~15% better heat dissipation and extended lifetime expectancy of IGBT
Kelvin emitter pin brings reduction of total switching losses

Target Applications

battery-charger

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