IKW40N120T2FKSA1
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Description:
IGBT 1200V 75A 2.2V TO247-3
Fabricant:
INFINEON
Désignation Produit:
IKW40N120T2
Rutronik No.:
TMOSP8409
Unité d'emballage:
30
MOQ:
30
Boitier:
TO247-3
Packaging:
TUBE
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Datasheet / Notice
Ajouté à projet
Echantillon
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- V(CE)
- 1200 V
- I(C)
- 75 A
- V(CEsat)
- 2.2 V
- Package
- TO247-3
- Bodydiode
- YES
- P(tot)
- 480 W
- Automotive
- NO
- t(r)
- 28 nS
- td(off)
- 314 nS
- td(on)
- 33 nS
- Mounting
- THT
- RoHS Status
- RoHS-conform
- Technology
- TrenchStop
- Packaging
- TUBE
- Référence fabricant
- SP000244962
- ECCN
- EAR99
- Numéro du tarif douanier
- 85412900000
- Pays
- China
- Annuaire ABC
- A
- Délai de livraison standard
- 21 Semaines
Infineon's TRENCHSTOP™ IGBT technology leads to significant improvement of static as well as dynamic performance of the device, due to combination of trenchstop-cell and fieldstop concept. The combination of IGBT with soft recovery Emitter Controled Diode further minimizes the turn-on losses. The highest efficiency is reached due to the best compromise between switching and conduction losses.
Summary of Features
- Lowest V CEsat drop for lower conduction losses
- Low switching losses
- Easy parallel switching capability due to positive temperature coefficient in V ce(sat)
- Very soft, fast recovery anti-parallel Emitter Controlled HE diode
- High ruggedness, temperature stable behavior
- Low EMI emissions
- Low gate charge
- Very tight parameter distribution
Benefits
- Highest efficiency – low conduction and switching losses
- Comprehensive portfolio in 600V and 1200V for flexibility of design
- High device reliability
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