IKW75N65EL5XKSA1

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Description: IGBT 650V 75A 1,1V TO247-3 Fabricant: INFINEON Désignation Produit: IKW75N65EL5 Rutronik No.: IGBT2016 Unité d'emballage: 30 MOQ: 240 Boitier: TO247-3 Packaging: TUBE

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Paramètres

V(CE): 650 V
I(C): 75 A
V(CEsat): 1.1 V
Package: TO247-3
Bodydiode: YES
P(tot): 268 W
Automotive: NO
t(r): 50 nS
td(off): 275 nS
td(on): 40 nS
Mounting: THT
RoHS Status: RoHS-conform
Technology: fast
Packaging: TUBE

Référence fabricant: SP001174464
ECCN: EAR99
Numéro du tarif douanier: 85412900000
Pays: China
Délai de livraison standard: 21 Semaines

Description

Infineon’s new L5 low saturation voltage (V CE(sat)) TRENCHSTOP™ IGBT family has been specifically optimized for low switching frequencies ranging from 50Hz to 20kHz. Optimization of the carrier profile of the innovative 55µm TRENCHSTOP™ 5 thin wafer technology allows to reduce conduction losses to the intrinsically low level – 1.05V for 30A IGBT and 1.10V for 75A IGBT.

Summary of Features

Lowest saturation voltage V CE(sat) of only 1.05V
Low switching losses of 1.6mJ @ 25°C for 30A IGBT
High thermal stability of electrical parameters - only 2% drift with T j increase from 25°C to 175°C
Enhanced efficiency for 20% lower switching losses in TO-247 4pin Kelvin-Emitter package

Benefits

Higher efficiency for 50Hz
Longer lifetime and higher reliability of IGBT
High design reliability due to stable thermal performance

Target Applications

UPS
Solar
Welding |delimiter|

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