IPD95R450P7ATMA1
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Datasheet / Notice
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Echantillon
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- Configuration
- N-CH
- V(DS)
- 950 V
- I(D)at Tc=25°C
- 14 A
- RDS(on)at 10V
- 450 mOhm
- Q(g)
- 35 nC
- P(tot)
- 104 W
- R(thJC)
- 1.2 K/W
- Logic level
- NO
- Mounting
- SMD
- Technology
- CoolMOS
- Fast bodydiode
- YES
- Automotive
- NO
- Package
- DPAK
- RoHS Status
- RoHS-conform
- Packaging
- REEL
- Référence fabricant
- SP001792318
- ECCN
- EAR99
- Numéro du tarif douanier
- 85412900000
- Pays
- Malaysia
- Annuaire ABC
- B
- Délai de livraison standard
- 19 Semaines
Designed to meet the growing consumer needs in the high voltage MOSFETs arena, the latest 950V CoolMOS™ P7 technology focuses on the low-power SMPS market.
Offering 50V more blocking voltage than its predecessor 900V CoolMOS™ C3, the 950V CoolMOS™ P7 series delivers outstanding performance in terms of efficiency, thermal behavior and ease-of-use. As the all other P7 family members, the 950V CoolMOS™ P7 series comes with an integrated Zener diode ESD protection. The integrated diode considerably improves ESD robustness, thus reducing ESD-related yield loss and reaching exceptional ease-of-use levels. CoolMOS™ P7 is developed with best-in-class VGS(th) of 3V and a narrow tolerance of only ± 0.5V, which makes it easy to drive and design-in.
- Best-in-class FOM RDS(on) Eoss; reduced Qg, Ciss and Coss
- Best-in-class DPAK RDS(on) of 450 mΩ
- Best-in-class VGS(th) of 3V and smallest VGS(th) variation of ±0.5V
- Integrated Zener diode ESD protection up to Class 2 (HBM)
- Best-in-class quality and reliability
- Up to 1% efficiency gain and 2°C to 10°C lower MOSFET temperature, compared to CoolMOS™ C3
- Enabling higher power density designs, BOM savings, and lower assembly cost
- Easy to drive and to design-in
- Better production yield by reducing ESD related failures
- Less production issues and reduced field returns
- Lighting
- Smart meter
- Mobile phone charger
- Notebook adaptor
- AUX power supply
- Industrial SMPS
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