IPDQ60R045CFD7XTMA1
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Datasheet / Notice
Ajouté à projet
Echantillon
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- Configuration
- N-CH
- V(DS)
- 650 V
- I(D)at Tc=25°C
- 153 A
- RDS(on)at 10V
- 45 mOhm
- Q(g)
- 79 nC
- P(tot)
- 297 W
- R(thJC)
- 45 K/W
- Logic level
- No
- Mounting
- SMD
- Technology
- CoolMOS
- Automotive
- NO
- Package
- HDSOP-22
- RoHS Status
- RoHS-conform
- Packaging
- REEL
- Référence fabricant
- SP005419749
- Numéro du tarif douanier
- 85412900000
- Pays
- Malaysia
- Délai de livraison standard
- 22 Semaines
The 600 V CoolMOS™ CFD7 is Infineon’s latest high voltage superjunction MOSFET technology with integrated fast body diode, completing the CoolMOS™ 7 series. CoolMOS™ CFD7 comes with reduced gate charge (Qg), improved turn-off behavior and a reverse recovery charge (Qrr) of up to 69% lower compared to the competition, as well as the lowest reverse recovery time (trr) in the market
Summary of Features
- Ultra-fast body diode
- Best-in-class reverse recovery charge (Qrr)
- Improved reverse diode dv/dt and dif/dt ruggedness
- Lowest FOM RDS(on) x Qg and Eoss
- Best-in-class RDS(on)/package combinations
Benefits
- Best-in-class hard commutation ruggedness
- Highest reliability for resonant topologies
- Highest efficiency with outstanding ease-of-use/performance trade-off
- Enabling increased power density solutions
Potential Applications
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