IRFB4110PBF
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Datasheet / Notice
Ajouté à projet
Echantillon
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- Configuration
- N-CH
- V(DS)
- 100 V
- I(D)at Tc=25°C
- 180 A
- RDS(on)at 10V
- 4.5 mOhm
- Q(g)
- 150 nC
- P(tot)
- 370 W
- R(thJC)
- 0.402 K/W
- Logic level
- NO
- Mounting
- THT
- Technology
- HEXFET
- Fast bodydiode
- NO
- Automotive
- NO
- Package
- TO-220
- RoHS Status
- RoHS-conform
- Packaging
- TUBE
- Référence fabricant
- SP001570598
- ECCN
- EAR99
- Numéro du tarif douanier
- 85412900000
- Pays
- China
- Annuaire ABC
- A
- Délai de livraison standard
- 14 Semaines
100V Single N-Channel StrongIRFET™ Power MOSFET in a TO-220 package
The StrongIRFET™ power MOSFET family is optimized for low RDS(on) and high current capability. The devices are ideal for low frequency applications requiring performance and ruggedness. The comprehensive portfolio addresses a broad range of applications including DC motors, battery management systems, inverters, and DC-DC converters.
Summary of Features
- Industry standard through-hole power package
- High-current rating
- Product qualification according to JEDEC standard
- Silicon optimized for applications switching below <100 kHz
- Softer body-diode compared to previous silicon generation
- Wide portfolio available
Benefits
- Standard pinout allows for drop in replacement
- High-current carrying capability package
- Industry standard qualification level
- High performance in low frequency applications
- Increased power density
- Provides designers flexibility in selecting the most optimal device for their application
Potential Applications
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