2ED21834S06JXUMA1
L'image affichée est une représentation non contractuelle
Datasheet / Notice
Ajouté à projet
Echantillon
Download the free Library Loader to convert this file for your ECAD Tool
- Channels
- 2
- Mounting
- SMD
- Diagnostics
- NO
- T(j,max)
- 150 °C
- Inductance
- 2.5 A
- V(in,min)
- 10 V
- V(in,max)
- 20 V
- t(on)
- 0.2 µS
- t(off)
- 0.2 µS
- OL Detection
- NO
- Automotive
- NO
- Package
- DSO-14
- RoHS Status
- RoHS-conform
- Packaging
- REEL
- Référence fabricant
- SP003357056
- ECCN
- EAR99
- Numéro du tarif douanier
- 85423990000
- Pays
- Malaysia
- Annuaire ABC
- B
- Délai de livraison standard
- 41 Semaines
650 V, 2.5 A high current half-bridge gate driver IC with integrated bootstrap diode in DSO-14 package
650 V half-bridge high current, and high speed gate driver for MOSFETand IGBT, with typical 2.5 A sink and source current in DSO-14 package. The smaller DSO-8 package version is also available: 2ED2183S06F.
Based on Infineon’s SOI-technology, having excellent ruggedness and noise immunity against negative transient voltages on VS pin. No parasitic thyristor structures present in the device, hence no parasitic latch up at all temperature and voltage conditions.
Summary of Features
- Operating voltages (VS node) upto + 650 V
- Negative VS transient immunity of 100 V
- Integrated ultra-fast, low resistance bootstrap diode, lower the BOM cost
- High and Low Voltage Pins Separated for Maximum Creepage and Clearance
- Separate logic and power ground
- Floating channel designed for bootstrap operation
- Integrated shoot-through protection with built-in dead time (programmable deadtime)
- Maximum supply voltage of 25 V
- Independent under voltage lockout (UVLO) for both channels
- 200 ns propagation delay
- HIN, /LIN input logic
- Logic Operational up to –11 V on VS Pin
- Negative Voltage Tolerance On Inputs of –5 V
- The floating channel can be used to drive an N-channel MOSFET, SiC MOSFET or IGBT in the high side configuration
Benefits
- High current gate driver - suitable for high current power device, and high frequency application
- Integrated bootstrap diode (BSD) - Space saving, reduced BOM cost, smaller PCB at lower cost with simpler design
- 50% lower level-shift losses
- Excellent ruggedness and noise immunity against negative transient voltages (-100 V) on VS pin
Applications
- Home appliances
- Motor control and drives
- Power Management (SMPS) - Reference Design
- Power tools
Vous pouvez commander de manière définitive les articles du panier ou - si vous avez encore des questions - ou adresser celui-ci comme demande sans engagement.
Rutronik24 e-commerce est réservé exclusivement aux organisations et clients Corporates.