IDD08SG60CXTMA2
L'image affichée est une représentation non contractuelle
Description:
S-Diode 600V 8A 2.2V PG-TO252-3
Fabricant:
INFINEON
Désignation Produit:
IDD08SG60C
Rutronik No.:
DSKY5195
Unité d'emballage:
2500
MOQ:
2500
Boitier:
DPAK
Packaging:
REEL
Trouver des alternatives
Datasheet / Notice
Ajouté à projet
Echantillon
Datasheet / Notice
Ajouté à projet
Echantillon
Download the free Library Loader to convert this file for your ECAD Tool
- V(RRM)
- 600 V
- I(F)per diode
- 8 A
- I(FSM)
- 35 A
- V(F)
- 2.2 V
- Technology
- 3thinQ!SiC
- Automotive
- NO
- Package
- DPAK
- RoHS Status
- RoHS-conform
- Packaging
- REEL
- Configuration
- SINGLE
- Mounting
- SMT
- T(j) max
- 175 °C
- Référence fabricant
- SP001632510
- ECCN
- EAR99
- Numéro du tarif douanier
- 85411000000
- Pays
- Malaysia
- Annuaire ABC
- A
- Délai de livraison standard
- 19 Semaines
The third generation of Infineon SiC Schottky diodes features the industry’s lowest device capacitance for any given current rating, which further enhances overall system efficiency, especially at higher switching frequencies and under low load conditions. The generation 3 is based on the same technology platform as generation 2 with the introduction, at package level, of the so called diffusion soldering.
Summary of Features
- Benchmark switching behavior
- No reverse recovery charge
- Temperature independent switching behavior
- High operating temperature (T j max 175°C)
Benefits
- System efficiency improvement compared to Si diodes
- Reduced cooling requirements
- Enabling higher frequency/increased power density
- Higher system reliability due to lower operating temperature
- Reduced EMI
Target Applications
- Server
- Telecom
- Solar
- Lighting
- PC power
- AC-DC
Vous pouvez commander de manière définitive les articles du panier ou - si vous avez encore des questions - ou adresser celui-ci comme demande sans engagement.
Rutronik24 e-commerce est réservé exclusivement aux organisations et clients Corporates.
