IDW20G120C5BFKSA1

L'image affichée est une représentation non contractuelle

Description: SiC-D 1200 20A 1,4V TO247-3 Fabricant: INFINEON Désignation Produit: IDW20G120C5B Rutronik No.: DSKYP5505 Unité d'emballage: 30 MOQ: 240 Boitier: TO247-3 Packaging: TUBE

Trouver des alternatives

Datasheet / Notice Ajouté à projet Echantillon

Download the free Library Loader to convert this file for your ECAD Tool

Paramètres

V(RRM): 1200 V
I(F)per diode: 10 A
I(FSM): 190 A
V(F): 1,4 V
Technology: 5thinQ!SiC
Automotive: NO
Package: TO247-3
RoHS Status: RoHS-conform
Packaging: TUBE
Configuration: CommonCath
Mounting: THT

Référence fabricant: SP001020716
ECCN: EAR99
Numéro du tarif douanier: 85411000000
Pays: China
Annuaire ABC: A
Délai de livraison standard: 22 Semaines

Description

CoolSiC™ Schottky diode generation 5 1200 V, 20 A in a TO-247-3 package presents a leading edge technology for SiC Schottky Barrier diodes. The thin wafer technology, already introduced with G2, is combined with a merged pn junction improving diode surge current capabilities. The result is a series of products delivering market leading efficiency and more system reliability at an attractive cost point.

Summary of Features

Best-in-class forward voltage (VF)
No reverse recovery charge
Mild positive temperature dependency of VF
Best-in-class surge current capability
Excellent thermal performance

Benefits

Highest system efficiency
Improved system efficiency at low switching frequencies
Increased power density at high switching frequencies
Higher system reliability
Reduced EMI

Vous pouvez commander de manière définitive les articles du panier ou - si vous avez encore des questions - ou adresser celui-ci comme demande sans engagement.

Rutronik24 e-commerce est réservé exclusivement aux organisations et clients Corporates.