IGP30N60H3XKSA1
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Description:
IGBT 600V 60A 1.95V TO220-3
Fabricant:
INFINEON
Désignation Produit:
IGP30N60H3
Rutronik No.:
IGBT1198
Unité d'emballage:
50
MOQ:
50
Boitier:
TO220-3
Packaging:
TUBE
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Datasheet / Notice
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Datasheet / Notice
Ajouté à projet
Echantillon
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- V(CE)
- 600 V
- I(C)
- 60 A
- V(CEsat)
- 1.95 V
- Package
- TO220-3
- Bodydiode
- NO
- P(tot)
- 187 W
- Automotive
- NO
- t(r)
- 22 nS
- td(off)
- 207 nS
- td(on)
- 18 nS
- Mounting
- THT
- RoHS Status
- RoHS-conform
- Technology
- HighSpeed
- Packaging
- TUBE
- Référence fabricant
- SP000702546
- ECCN
- EAR99
- Numéro du tarif douanier
- 85412900000
- Pays
- China
- Annuaire ABC
- A
- Délai de livraison standard
- 21 Semaines
Infineon’s high speed devices are used to reduce the size of the active components (25kHz --> 70kHz). Infineon’s HighSpeed 3 family provides the best compromise between switching and conduction losses. The key feature of this family is a MOSFET-like turn-off switching behavior, leading to low turn off losses.
Summary of Features
- Designed specifically to replace planar MOSFETs in applications switching at frequencies below 70kHz
- Low switching losses for high efficiency
- Excellent V ce(sat) behavior thanks to the famous Infineon TRENCHSTOP™ technology
- Fast switching behavior with low EMI emissions
- Optimized diode for target applications, meaning further improvement in switching losses
- Low gate resistor selection possible (down to 5Ω) whilst maintaining excellent switching behaviour
- Short circuit capability
- Offering T j(max) of 175°C
- Packaged with and without freewheeling diode for increased design freedom
Benefits
- Excellent cost/performance
- Low switching and conduction losses
- Very good EMI behavior
- A small gate resistor for reduced delay time and voltage overshoot
- Smaller die sizes -> smaller packages
- Best-in-class IGBT efficiency and EMI behavior
Target Applications
- Welding Inverters
- Solar Inverters
- UPS
- All hard switching applications
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