IQDH29NE2LM5CGATMA1
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Datasheet / Notice
Ajouté à projet
Echantillon
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- Configuration
- N-CH
- V(DS)
- 25 V
- I(D)at Tc=25°C
- 789 A
- RDS(on)at 10V
- 0.29 mOhm
- Q(g)
- 191 nC
- P(tot)
- 278 W
- R(thJC)
- 0.45 K/W
- Logic level
- YES
- Automotive
- NO
- Package
- PQ-TTFN-9
- RoHS Status
- RoHS-conform
- Packaging
- REEL
- Référence fabricant
- SP005408851
- Numéro du tarif douanier
- 85412900000
- Pays
- Malaysia
- Délai de livraison standard
- 20 Semaines
OptiMOS™ power MOSFETs 25 V in PQFN 5x6 mm 2 Source-Down package with industry leading RDS(on) .
The power MOSFET IQDH29NE2LM5CG 25 V comes in a PQFN 5x6 mm2 Source-Down package. The part offers the industry’s lowest RDS(on) of 0.29 mΩ combined with outstanding thermal performance for easy power loss management. This enables higher system efficiency and power density for a large variety of end applications like SMPS, telecom power, and intermediate bus conversion in high-performance computing, like hyper-scale data centers and AI-server farms.
Summary of Features
- Cutting edge silicon technology OptiMOS™ 25 V with outstanding FOMs
- Source-Down package with improved thermal performance and ultra-low parasitics
- Source-Down package with maximized chip/package ratio
- Source-Down package in Center-Gate footprint
Benefits
- Minimized conduction losses
- Reduced voltage overshoot
- Increased maximum current capability
- Fast switching
- Less device paralleling required
- Center-Gate footprint enables optimized parallelization
- Lowest possible RDS(on) on 5x6 mm² PCB real-estate
- Improved thermal performance for easy thermal management
- Lowest package parasitics for best switching performance
- industry standard package
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